RF & Microwave Amplifiers

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC8120	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	28		PHEMT	1			250 mA	COMPONENT	4		50 ohm	85 Cel	19 dB	-55 Cel				71000 MHz	76000 MHz
HMC-C582	Analog Devices	WIDE BAND LOW POWER		4		PHEMT	1	23 dBm		900 mA	COMPONENT	15	MODULE,4LEAD(UNSPEC)	50 ohm	75 Cel	16 dB	-40 Cel				10 MHz	20000 MHz
HMC716ALP3E	Analog Devices	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	10 dBm	1.38	90 mA	COMPONENT	3,5	LCC16,.12SQ,20	50 ohm	85 Cel	15.5 dB	-40 Cel				3100 MHz	3900 MHz
HMC952ALP5GE	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	GAAS	1	24 dBm			COMPONENT	6	LCC24,.2SQ,25	50 ohm	85 Cel	28 dB	-55 Cel	Matte Tin (Sn) - annealed		e3	8000 MHz	14000 MHz
HMC7543-SX	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT			PHEMT	1			450 mA	COMPONENT	4	DIE OR CHIP	50 ohm	85 Cel	19 dB	-55 Cel				71000 MHz	76000 MHz
HMC7543	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT			PHEMT	1			450 mA	COMPONENT	4	DIE OR CHIP	50 ohm	85 Cel	19 dB	-55 Cel				71000 MHz	76000 MHz
ADL5723ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1				COMPONENT	1.8,3.3	SOLCC8,.08,20	100 ohm	85 Cel	24.1 dB	-40 Cel				10100 MHz	11700 MHz
ADL5726ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY		1				COMPONENT	1.8,3.3	SOLCC8,.08,20	100 ohm	85 Cel	22.5 dB	-40 Cel				21200 MHz	23600 MHz
HMC392ALC4	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24		GAAS	1	20 dBm		75 mA	COMPONENT	5	LCC24,.16SQ,20	50 ohm	85 Cel	14.5 dB	-40 Cel	GOLD NICKEL	HIGH RELIABILITY	e4	3500 MHz	8000 MHz
HMC392A	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	10		GAAS	1	20 dBm		75 mA	COMPONENT	5	DIE OR CHIP	50 ohm	85 Cel	14.5 dB	-55 Cel				3500 MHz	7000 MHz
HMC994ALP5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	PHEMT	1			300 mA	COMPONENT	10	LCC32,.2SQ,20	50 ohm		11 dB		Matte Tin (Sn)		e3		28000 MHz
HMC998A	Analog Devices	WIDE BAND MEDIUM POWER						27 dBm	7		COMPONENT			50 ohm	85 Cel	12 dB	-55 Cel				0 MHz	22000 MHz
HMC8121-SX	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT			PHEMT	1				COMPONENT	5	DIE OR CHIP	50 ohm	85 Cel	19 dB	-55 Cel				81000 MHz	86000 MHz
HMC8121	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT			PHEMT	1				COMPONENT	5	DIE OR CHIP	50 ohm	85 Cel	19 dB	-55 Cel				81000 MHz	86000 MHz
HMC8142-SX	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT			E-PHEMT	1			450 mA	COMPONENT	4	DIE OR CHIP	50 ohm	85 Cel	19 dB	-55 Cel				81000 MHz	86000 MHz
HMC8142	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT			E-PHEMT	1			450 mA	COMPONENT	4	DIE OR CHIP	50 ohm	85 Cel	19 dB	-55 Cel				81000 MHz	86000 MHz
HMC8410LP2FE	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm	85 Cel	13 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	10 MHz	10000 MHz
HMC7229-SX	Analog Devices	WIDE BAND MEDIUM POWER						21 dBm			COMPONENT			50 ohm	85 Cel	21.5 dB	-55 Cel				33000 MHz	40000 MHz
HMC7229	Analog Devices	WIDE BAND MEDIUM POWER						21 dBm			COMPONENT			50 ohm	85 Cel	21.5 dB	-55 Cel				33000 MHz	40000 MHz
HMC589AST89E	Analog Devices	WIDE BAND LOW POWER						8 dBm			COMPONENT			50 ohm	85 Cel	13 dB	-40 Cel	MATTE TIN		e3	0 MHz	4000 MHz
HMC1121LP6GETR	Analog Devices	WIDE BAND HIGH POWER						24 dBm			COMPONENT			50 ohm	85 Cel	25 dB	-40 Cel	MATTE TIN		e3	5500 MHz	8500 MHz
HMC1121LP6GE	Analog Devices	WIDE BAND HIGH POWER						24 dBm			COMPONENT			50 ohm	85 Cel	25 dB	-40 Cel	MATTE TIN		e3	5500 MHz	8500 MHz
HMC8401-SX	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		PHEMT	1	20 dBm		60 mA	COMPONENT	7.5	DIE OR CHIP	50 ohm	85 Cel	12.5 dB	-55 Cel				10 MHz	28000 MHz
HMC8401	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	8		PHEMT	1	20 dBm		60 mA	COMPONENT	7.5	DIE OR CHIP	50 ohm	85 Cel	12.5 dB	-55 Cel				10 MHz	28000 MHz
HMC1114LP5DETR	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	30 dBm		150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	29 dB	-40 Cel				2700 MHz	3800 MHz
HMC717ALP3E	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	PHEMT	1	20 dBm	1.43	100 mA	COMPONENT	3/5	LCC16,.12SQ,20	50 ohm	85 Cel	11 dB	-40 Cel	MATTE TIN		e3	4800 MHz	6000 MHz
HMC1144-SX	Analog Devices	WIDE BAND LOW POWER						22 dBm			COMPONENT			50 ohm	85 Cel	17 dB	-55 Cel				35000 MHz	70000 MHz
HMC8400-SX	Analog Devices	WIDE BAND LOW POWER						23 dBm			COMPONENT			50 ohm	85 Cel	11.5 dB	-55 Cel				2000 MHz	30000 MHz
HMC8402-SX	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm	85 Cel	11 dB	-55 Cel				2000 MHz	30000 MHz
HMC8402	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm	85 Cel	11 dB	-55 Cel				2000 MHz	30000 MHz
MML25231HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	E-PHEMT	1	20 dBm		65 mA	COMPONENT	5	SOLCC8,.08,20	50 ohm		14.2 dB		TIN		e3	1000 MHz	4000 MHz
HMC8410CHIPS-SX	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm	85 Cel	13 dB	-55 Cel				10 MHz	10000 MHz
HMC8410CHIPS	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm	85 Cel	13 dB	-55 Cel				10 MHz	10000 MHz
A2I20D040GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	18 dBm	10		COMPONENT	28		50 ohm	150 Cel	31.5 dB	-40 Cel	TIN		e3	1400 MHz	2200 MHz
A2I20D040NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	18 dBm	10		COMPONENT	28		50 ohm	150 Cel	31.5 dB	-40 Cel	TIN		e3	1400 MHz	2200 MHz
MMRF2010GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS	1	25 dBm	10		COMPONENT	50		50 ohm	150 Cel	30.5 dB	-55 Cel	TIN		e3	1030 MHz	1090 MHz
MMRF2010NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS	1	25 dBm	10		COMPONENT	50		50 ohm	150 Cel	30.5 dB	-55 Cel	TIN		e3	1030 MHz	1090 MHz
A2I35H060GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	26 dBm	10		COMPONENT	28		50 ohm	150 Cel	23 dB	-40 Cel	TIN		e3	3400 MHz	3800 MHz
A2I35H060NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	26 dBm	10		COMPONENT	28		50 ohm	150 Cel	23 dB	-40 Cel	TIN		e3	3400 MHz	3800 MHz
HMC7950LS6TR	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm	85 Cel	13 dB	-40 Cel	TUNGSTEN NICKEL GOLD			2000 MHz	28000 MHz
HMC7950LS6	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm	85 Cel	13 dB	-40 Cel	TUNGSTEN NICKEL GOLD			2000 MHz	28000 MHz
HMC8113	Analog Devices	WIDE BAND HIGH POWER						5 dBm	2		MODULE			50 ohm	50 Cel	85 dB	10 Cel		TTL COMPATIBLE		2000 MHz	6000 MHz
HMC8114	Analog Devices	WIDE BAND HIGH POWER						5 dBm	2		MODULE			50 ohm	64 Cel	53 dB	-20 Cel		TTL COMPATIBLE		5800 MHz	18000 MHz
HMC5805ALS6TR	Analog Devices	WIDE BAND LOW POWER						22 dBm			COMPONENT			50 ohm	85 Cel	9 dB	-40 Cel	GOLD OVER NICKEL		e4	0 MHz	40000 MHz
HMC797ALP5E	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	32		GAAS	1	27 dBm	7	440 mA	COMPONENT	3.5,10	LCC32,.2SQ,20	50 ohm	85 Cel	11 dB	-40 Cel				0 MHz	22000 MHz
HMC797APM5E	Analog Devices	WIDE BAND MEDIUM POWER						27 dBm	7		COMPONENT			50 ohm	85 Cel	13 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	0 MHz	22000 MHz
HMC797A	Analog Devices	WIDE BAND MEDIUM POWER						27 dBm	7		COMPONENT			50 ohm	85 Cel	14 dB	-55 Cel				0 MHz	22000 MHz
HMC863ALC4	Analog Devices	WIDE BAND MEDIUM POWER						26 dBm	7		COMPONENT			50 ohm	85 Cel	20.5 dB	-40 Cel	Gold (Au) - with Nickel (Ni) barrier		e4	24000 MHz	29500 MHz

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.