RF & Microwave Amplifiers

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
HMC1132PM5E	Analog Devices	WIDE BAND MEDIUM POWER						18 dBm	7		COMPONENT			50 ohm	85 Cel	21 dB	-55 Cel				27000 MHz	32000 MHz
A2I09VD050GNR1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	LDMOS	1	20 dBm	10		COMPONENT	48		50 ohm	150 Cel	35 dB	-40 Cel	TIN		e3	575 MHz	960 MHz
CMPA5259050F	Wolfspeed	WIDE BAND HIGH POWER	SURFACE MOUNT	6	CERAMIC	PHEMT	1		3	1000 mA	COMPONENT	28		50 ohm	105 Cel	31 dB	-40 Cel				5200 MHz	5900 MHz
HMC8415LP6GETR	Analog Devices	WIDE BAND HIGH POWER						30 dBm			COMPONENT			50 ohm	85 Cel	25.5 dB	-40 Cel	MATTE TIN		e3	9000 MHz	10500 MHz
HMC8415LP6GE	Analog Devices	WIDE BAND HIGH POWER						30 dBm			COMPONENT			50 ohm	85 Cel	25.5 dB	-40 Cel	MATTE TIN		e3	9000 MHz	10500 MHz
HMC1114PM5E	Analog Devices	WIDE BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAN	1	18 dBm	6	150 mA	COMPONENT	28	LCC32,.2SQ,20	50 ohm	85 Cel	31 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2700 MHz	3800 MHz
ADPA7001CHIPS	Analog Devices	WIDE BAND MEDIUM POWER				PHEMT	1	17 dBm		350 mA	COMPONENT	3.5	DIE OR CHIP	50 ohm	85 Cel	12 dB	-55 Cel				50000 MHz	95000 MHz
HMC8205BCHIPS	Analog Devices	WIDE BAND HIGH POWER						35 dBm			COMPONENT			50 ohm	85 Cel	24.5 dB	-55 Cel				400 MHz	6000 MHz
ADPA7002CHIP	Analog Devices	WIDE BAND MEDIUM POWER						25 dBm			COMPONENT			50 ohm	85 Cel	12 dB	-55 Cel				20000 MHz	44000 MHz
ADPA7005CHIP	Analog Devices	WIDE BAND MEDIUM POWER						27 dBm			COMPONENT			50 ohm	85 Cel	11.5 dB	-55 Cel				20000 MHz	44000 MHz
HMC1049SCPZ-EP-R7	Analog Devices	WIDE BAND LOW POWER						18 dBm			COMPONENT			50 ohm	105 Cel	10 dB	-55 Cel				300 MHz	20000 MHz
HMC1022A-SX	Analog Devices	WIDE BAND LOW POWER						22 dBm			COMPONENT			50 ohm	85 Cel	11.5 dB	-55 Cel				0 MHz	48000 MHz
HMC1022ACHIPS	Analog Devices	WIDE BAND LOW POWER						22 dBm			COMPONENT			50 ohm	85 Cel	11.5 dB	-55 Cel				0 MHz	48000 MHz
HMC863ALC4TR-R5	Analog Devices	WIDE BAND MEDIUM POWER						26 dBm	7		COMPONENT			50 ohm	85 Cel	20.5 dB	-40 Cel	Gold (Au) - with Nickel (Ni) barrier		e4	24000 MHz	29500 MHz
HMC863ALC4TR	Analog Devices	WIDE BAND MEDIUM POWER						26 dBm	7		COMPONENT			50 ohm	85 Cel	20.5 dB	-40 Cel	Gold (Au) - with Nickel (Ni) barrier		e4	24000 MHz	29500 MHz
MAAL-011129-TR1000	M/a-com Technology Solutions	WIDE BAND LOW POWER						10 dBm			COMPONENT			50 ohm	85 Cel	20 dB	-40 Cel	Matte Tin (Sn)		e3	18000 MHz	31500 MHz
ADL8111ACCZN	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm	85 Cel	10.6 dB	-40 Cel				10 MHz	8000 MHz
HMC8411TCPZ-EP-PT	Analog Devices	WIDE BAND LOW POWER						20 dBm			COMPONENT			50 ohm	125 Cel	11 dB	-55 Cel				10 MHz	10000 MHz
ADPA7006CHIP	Analog Devices	WIDE BAND MEDIUM POWER						20 dBm			COMPONENT			50 ohm	85 Cel	21 dB	-55 Cel				18000 MHz	44000 MHz
HMC441LC3BTR-R5	Analog Devices	WIDE BAND LOW POWER						15 dBm			COMPONENT			50 ohm	85 Cel	10 dB	-40 Cel	GOLD OVER NICKEL		e4	6000 MHz	18000 MHz
ADPA9002ACGZN-R7	Analog Devices	WIDE BAND MEDIUM POWER						25 dBm	7		COMPONENT			50 ohm	85 Cel	13.5 dB	-40 Cel				0 MHz	10000 MHz
ADPA9002ACGZN	Analog Devices	WIDE BAND MEDIUM POWER						25 dBm	7		COMPONENT			50 ohm	85 Cel	13.5 dB	-40 Cel				0 MHz	10000 MHz
ADPA7005AEHZ	Analog Devices	WIDE BAND MEDIUM POWER						27 dBm			COMPONENT			50 ohm	85 Cel	12 dB	-40 Cel				18000 MHz	44000 MHz
A3I20X050NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS	1	20 dBm			COMPONENT	2.15/28		50 ohm	150 Cel	28 dB	-40 Cel	TIN		e3	1800 MHz	2200 MHz
ADPA7002AEHZ	Analog Devices	WIDE BAND MEDIUM POWER						25 dBm			COMPONENT			50 ohm	85 Cel	12 dB	-55 Cel				20000 MHz	44000 MHz
ADCA3992AMLZ	Analog Devices	WIDE BAND HIGH POWER	PANEL MOUNT	8		HYBRID	1			550 mA	MODULE	34	SOT-115J	75 ohm	85 Cel	26.7 dB	-30 Cel				45 MHz	1218 MHz
HMC1022A	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8		GAAS	1		1.08		COMPONENT	10	DIE OR CHIP	50 ohm		9.5 dB					0 MHz	48000 MHz
ADPA7007CHIP	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	10		PHEMT	1	18 dBm		1400 mA	COMPONENT	5	DIE OR CHIP	50 ohm	85 Cel	18 dB	-55 Cel				18000 MHz	44000 MHz
ADPA7006AEHZ-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	CERAMIC, METAL-SEALED COFIRED	GAAS	1	20 dBm			COMPONENT	5		50 ohm	85 Cel	20 dB	-40 Cel				18000 MHz	44000 MHz
ADPA7006AEHZ	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	CERAMIC, METAL-SEALED COFIRED	GAAS	1	20 dBm			COMPONENT	5		50 ohm	85 Cel	20 dB	-40 Cel				18000 MHz	44000 MHz
CMPA801B025P	Wolfspeed
ADPA7007AEHZ-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	18	CERAMIC, METAL-SEALED COFIRED	GAAS	1	27 dBm	1.29		COMPONENT	5		50 ohm	85 Cel	18.5 dB	-40 Cel				20000 MHz	44000 MHz
ADPA7007AEHZ	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	18	CERAMIC, METAL-SEALED COFIRED	GAAS	1	27 dBm	1.29		COMPONENT	5		50 ohm	85 Cel	18.5 dB	-40 Cel				20000 MHz	44000 MHz
MAAM-011252-DIE	M/a-com Technology Solutions	WIDE BAND LOW POWER	SURFACE MOUNT	8			1	24 dBm	1.67	75 mA	COMPONENT	5	DIE OR CHIP	50 ohm	85 Cel	18 dB	-40 Cel				30 MHz	8000 MHz
ADL8104ACPZN	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16		PHEMT	1	25 dBm	1.58		COMPONENT	5	LCC16,.12SQ,20	50 ohm	85 Cel	10 dB	-40 Cel				400 MHz	7500 MHz
ADL8104ACPZN-R7	Analog Devices	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16		PHEMT	1	25 dBm	1.58		COMPONENT	5	LCC16,.12SQ,20	50 ohm	85 Cel	10 dB	-40 Cel				400 MHz	7500 MHz
ADPA1105ACGZN	Analog Devices	NARROW BAND HIGH POWER	SURFACE MOUNT	32		GAN	1	30 dBm	1.5		COMPONENT	50	LCC32,.2SQ,20	50 ohm	85 Cel	30.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	900 MHz	1600 MHz
ADPA1105ACGZN-R7	Analog Devices	NARROW BAND HIGH POWER	SURFACE MOUNT	32		GAN	1	30 dBm	1.5		COMPONENT	50	LCC32,.2SQ,20	50 ohm	85 Cel	30.5 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	900 MHz	1600 MHz
AFSC5G40E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	28	LCC26,.24X.4,40	50 ohm	125 Cel	27.1 dB					3700 MHz	4000 MHz
AFSC5G35E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	30	LCC26,.24X.4,40	50 ohm	125 Cel	29.3 dB		NICKEL PALLADIUM GOLD		e4	3400 MHz	3700 MHz
ADCA3952AMLZ	Analog Devices	WIDE BAND HIGH POWER	PANEL MOUNT	8		PHEMT	1	75 dBm		490 mA	MODULE	24		75 ohm	85 Cel	25 dB	-30 Cel				45 MHz	1218 MHz
A3M35TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	26	LCC26,.24X.4,40	50 ohm	125 Cel	26.5 dB			I/P POWER-MAX (PEAK)=25DBM		3300 MHz	3700 MHz
A3M37TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	26	LCC26,.24X.4,40	50 ohm	125 Cel	26.1 dB		NICKEL PALLADIUM GOLD	I/P POWER-MAX (PEAK)=25DBM	e4	3600 MHz	3800 MHz
ADCA3950AMLZ	Analog Devices	WIDE BAND HIGH POWER	PANEL MOUNT	7		PHEMT	1	75 dBm		490 mA	MODULE	24		75 ohm	85 Cel	25 dB	-30 Cel				45 MHz	1218 MHz
ADL9005ACPZN-R7	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	PHEMT	1	22 dBm	1.49		COMPONENT	5	LCC24,.16SQ,20	50 ohm	85 Cel	17 dB	-40 Cel				10 MHz	26500 MHz
MAAM-011290-DIE	M/a-com Technology Solutions	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8			1	10 dBm	1.58	140 mA	COMPONENT	5	DIE OR CHIP	50 ohm	85 Cel	16.5 dB	-40 Cel				5000 MHz	20000 MHz
HMC717ALP3ETR	Analog Devices	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	PHEMT	1	20 dBm	1.43	100 mA	COMPONENT	3/5	LCC12,.12SQ,20	50 ohm	85 Cel	11 dB	-40 Cel	Matte Tin (Sn) - annealed		e3	4800 MHz	6000 MHz
AFSC5G23E37T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	28	LCC26,.24X.4,20	50 ohm	125 Cel	32 dB			I/P POWER-MAX (PEAK)=25DBM		2300 MHz	2400 MHz

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.