RF & Microwave Amplifiers

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

AVT-50663-BLKG

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

15 dBm

39.5 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

13.8 dB

-40 Cel

Tin (Sn)

e3

0 MHz

6000 MHz

AVT-50663-TR1G

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

15 dBm

39.5 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

13.8 dB

-40 Cel

Tin (Sn)

e3

0 MHz

6000 MHz

AVT-52663-BLKG

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

18 dBm

49 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

13.8 dB

-40 Cel

Tin (Sn)

e3

0 MHz

6000 MHz

AVT-52663-TR1G

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

18 dBm

49 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

13.8 dB

-40 Cel

Tin (Sn)

e3

0 MHz

6000 MHz

MGA-645T6-TR1G

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

15 dBm

COMPONENT

3

SOLCC6,.08,20

50 ohm

RF/Microwave Amplifiers

13.5 dB

Gold (Au) - with Nickel (Ni) barrier

LOW NOISE

e4

1500 MHz

3000 MHz

MGA-645T6-TR2G

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

GAAS

1

15 dBm

COMPONENT

3

SOLCC6,.08,20

50 ohm

RF/Microwave Amplifiers

13.5 dB

Gold (Au) - with Nickel (Ni) barrier

LOW NOISE

e4

1500 MHz

3000 MHz

AMMP-6222-TR1G

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

10 dBm

160 mA

COMPONENT

4

LCC8(UNSPEC)

50 ohm

RF/Microwave Amplifiers

23 dB

Nickel/Gold (Ni/Au)

LOW NOISE

e4

7000 MHz

21000 MHz

MAX2644EXT-T

Maxim Integrated

WIDE BAND MEDIUM POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

11 mA

COMPONENT

3

TSSOP6,.08

50 ohm

85 Cel

15 dB

-40 Cel

TIN LEAD

e0

2400 MHz

2500 MHz

MAX2130EUA

Maxim Integrated

WIDE BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

15 dBm

2

104 mA

COMPONENT

5

TSSOP8,.19

75 ohm

RF/Microwave Amplifiers

85 Cel

7.1 dB

-40 Cel

TIN LEAD

e0

44 MHz

878 MHz

MAX2371EGC

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

12

CERAMIC

1

5 dBm

5.5 mA

COMPONENT

2.7

LCC12,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

10.5 dB

-40 Cel

Tin/Lead (Sn85Pb15)

e0

136 MHz

174 MHz

AMF-3F-17701970-45-8P

L-3 Narda-miteq

WIDE BAND LOW POWER

2

COAXIAL

24 dB

K/SMA

17700 MHz

19700 MHz

AMF-4F-02200230-15-13P

L-3 Narda-miteq

NARROW BAND LOW POWER

1.5

COAXIAL

58 dB

SMA-F

2200 MHz

2300 MHz

MAX2632EUS-T

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

BIPOLAR

5 dBm

1.25

11 mA

COMPONENT

3

TO-253

50 ohm

RF/Microwave Amplifiers

85 Cel

11 dB

-40 Cel

Tin/Lead (Sn/Pb)

LOW NOISE

e0

800 MHz

1000 MHz

MAX2641EUT

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

6.4 mA

COMPONENT

3/5

TSOP6,.11,37

50 ohm

RF/Microwave Amplifiers

85 Cel

12.4 dB

-40 Cel

TIN LEAD

e0

1400 MHz

2500 MHz

MAX2473EUT

Maxim Integrated

WIDE BAND LOW POWER

10 dBm

COMPONENT

50 ohm

85 Cel

6 dB

-40 Cel

TIN LEAD

e0

500 MHz

2500 MHz

THS9000DRDR

Texas Instruments

WIDE BAND MEDIUM POWER

COMPONENT

50 ohm

85 Cel

15.6 dB

-40 Cel

50 MHz

400 MHz

MAX2130EUA-T

Maxim Integrated

WIDE BAND MEDIUM POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

15 dBm

2

104 mA

COMPONENT

5

TSSOP8,.19

75 ohm

RF/Microwave Amplifiers

85 Cel

7.1 dB

-40 Cel

Tin/Lead (Sn85Pb15)

e0

44 MHz

878 MHz

MAX2232EEE-T

Maxim Integrated

NARROW BAND MEDIUM POWER

10 dBm

1.5

COMPONENT

50 ohm

85 Cel

23.9 dB

-40 Cel

TIN LEAD

IT CAN ALSO OPERATE AT 800 TO 1000 MHZ

e0

800 MHz

1000 MHz

MAX2373EGC-T

Maxim Integrated

NARROW BAND LOW POWER

SURFACE MOUNT

12

CERAMIC

1

5 dBm

5.5 mA

COMPONENT

2.7

LCC12,.12SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

10.5 dB

-40 Cel

Tin/Lead (Sn/Pb)

e0

850 MHz

940 MHz

MAX2611EUS-T

Maxim Integrated

WIDE BAND LOW POWER

SURFACE MOUNT

4

PLASTIC/EPOXY

1

13 dBm

1.6

COMPONENT

3.8

TO-253

50 ohm

RF/Microwave Amplifiers

85 Cel

17.3 dB

-40 Cel

TIN LEAD

LOW NOISE

e0

0 MHz

1100 MHz

MAX2645EUB-T

Maxim Integrated

NARROW BAND MEDIUM POWER

16 dBm

COMPONENT

50 ohm

85 Cel

12.9 dB

-40 Cel

TIN LEAD

e0

3400 MHz

3800 MHz

CC2590RGVT

Texas Instruments

NARROW BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

1

10 dBm

COMPONENT

3

85 Cel

14.1 dB

-40 Cel

NICKEL PALLADIUM GOLD

LOW NOISE

e4

2400 MHz

2483.5 MHz

AD8350ARMZ20

Analog Devices

WIDE BAND MEDIUM POWER

8 dBm

COMPONENT

200 ohm

85 Cel

19 dB

-40 Cel

MATTE TIN

e3

1000 MHz

WS1103-TR1

Broadcom

NARROW BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

10 dBm

2.5

515 mA

COMPONENT

3.4

SOLCC8,.11,32

50 ohm

RF/Microwave Amplifiers

85 Cel

14 dB

-30 Cel

824 MHz

849 MHz

CC2590RGVRG4

Texas Instruments

NARROW BAND LOW POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

1

10 dBm

COMPONENT

3

85 Cel

14.1 dB

-40 Cel

NICKEL PALLADIUM GOLD

LOW NOISE

e4

2400 MHz

2483.5 MHz

SKY65013-70LF

Skyworks Solutions

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

1

15 dBm

2

COMPONENT

3.5

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

12.5 dB

-40 Cel

7000 MHz

SKY65015-92LF

Skyworks Solutions

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

GAAS

1

15 dBm

2

COMPONENT

4.7

TO-243

50 ohm

RF/Microwave Amplifiers

85 Cel

18 dB

-45 Cel

6000 MHz

ALM-GA001-BLKG

Broadcom

WIDE BAND LOW POWER

13 dBm

COMPONENT

85 Cel

16.2 dB

-40 Cel

CMOS COMPATIBLE

900 MHz

3500 MHz

ALM-GA001-TR1G

Broadcom

WIDE BAND LOW POWER

13 dBm

COMPONENT

85 Cel

16.2 dB

-40 Cel

CMOS COMPATIBLE

900 MHz

3500 MHz

AD8353ACP-R2

Analog Devices

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

10 dBm

52 mA

COMPONENT

5

SOLCC8,.08,20

50 ohm

RF/Microwave Amplifiers

85 Cel

15.6 dB

-40 Cel

Tin/Lead (Sn85Pb15)

e0

1 MHz

2700 MHz

SMA661ASTR

STMicroelectronics

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BICMOS

1

COMPONENT

2.7

FL6,.047,20

50 ohm

RF/Microwave Amplifiers

85 Cel

18 dB

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

LOW NOISE

e4

AD8350ARZ15-REEL7

Analog Devices

WIDE BAND MEDIUM POWER

8 dBm

COMPONENT

200 ohm

85 Cel

14 dB

-40 Cel

MATTE TIN

e3

1000 MHz

AD8350ARMZ20-REEL7

Analog Devices

WIDE BAND MEDIUM POWER

8 dBm

COMPONENT

200 ohm

85 Cel

19 dB

-40 Cel

MATTE TIN

e3

1000 MHz

THS9000DRWR

Texas Instruments

WIDE BAND MEDIUM POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

100 mA

COMPONENT

5

50 ohm

85 Cel

15.7 dB

-40 Cel

NICKEL PALLADIUM GOLD SILVER

e4

50 MHz

400 MHz

THS9001DBVRG4

Texas Instruments

WIDE BAND MEDIUM POWER

COMPONENT

50 ohm

85 Cel

15 dB

-40 Cel

50 MHz

350 MHz

TRF1123IRTMTG3

Texas Instruments

NARROW BAND MEDIUM POWER

SURFACE MOUNT

32

PLASTIC/EPOXY

1

20 dBm

700 mA

COMPONENT

7

LCC32,.2SQ,20

50 ohm

RF/Microwave Amplifiers

85 Cel

26 dB

-40 Cel

Matte Tin (Sn)

e3

2100 MHz

2700 MHz

MAX2056ETX

Maxim Integrated

WIDE BAND MEDIUM POWER

20 dBm

COMPONENT

50 ohm

85 Cel

15.5 dB

-40 Cel

TIN LEAD

e0

800 MHz

1000 MHz

MAX2057ETX

Maxim Integrated

NARROW BAND MEDIUM POWER

20 dBm

COMPONENT

50 ohm

85 Cel

13.5 dB

-40 Cel

TIN LEAD

e0

1700 MHz

2500 MHz

ALM-1712-BLKG

Broadcom

NARROW BAND LOW POWER

12

PLASTIC/EPOXY

1

15 dBm

15 mA

COMPONENT

1.8/2.7

MODULE,12LEAD(UNSPEC)

50 ohm

RF/Microwave Amplifiers

11 dB

LOW NOISE

ALM-1712-TR1G

Broadcom

NARROW BAND LOW POWER

12

PLASTIC/EPOXY

1

15 dBm

15 mA

COMPONENT

1.8/2.7

MODULE,12LEAD(UNSPEC)

50 ohm

RF/Microwave Amplifiers

11 dB

LOW NOISE

ALM-32120-BLKG

Broadcom

WIDE BAND MEDIUM POWER

PLASTIC/EPOXY

GAAS

1

28 dBm

910 mA

COMPONENT

5

MODULE(UNSPEC)

50 ohm

RF/Microwave Amplifiers

12.5 dB

700 MHz

1000 MHz

ALM-32120-TR1G

Broadcom

WIDE BAND MEDIUM POWER

PLASTIC/EPOXY

GAAS

1

28 dBm

910 mA

COMPONENT

5

MODULE(UNSPEC)

50 ohm

RF/Microwave Amplifiers

12.5 dB

700 MHz

1000 MHz

ALM-32120-TR2G

Broadcom

WIDE BAND MEDIUM POWER

PLASTIC/EPOXY

GAAS

1

28 dBm

910 mA

COMPONENT

5

MODULE(UNSPEC)

50 ohm

RF/Microwave Amplifiers

12.5 dB

700 MHz

1000 MHz

AMMC-6442-W10

Broadcom

WIDE BAND MEDIUM POWER

1

20 dBm

COMPONENT

5

DIE OR CHIP

50 ohm

RF/Microwave Amplifiers

20 dB

37000 MHz

40000 MHz

AMMC-6442-W50

Broadcom

WIDE BAND MEDIUM POWER

1

20 dBm

COMPONENT

5

DIE OR CHIP

50 ohm

RF/Microwave Amplifiers

20 dB

37000 MHz

40000 MHz

AMMP-6333-BLKG

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

20 dBm

230 mA

COMPONENT

5

LCC8,.2SQ,28

50 ohm

RF/Microwave Amplifiers

18 dB

Nickel/Gold (Ni/Au)

e4

18000 MHz

33000 MHz

AMMP-6333-TR1G

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

20 dBm

230 mA

COMPONENT

5

LCC8,.2SQ,28

50 ohm

RF/Microwave Amplifiers

18 dB

Nickel/Gold (Ni/Au)

e4

18000 MHz

33000 MHz

AMMP-6333-TR2G

Broadcom

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

5 V

1

20 dBm

COMPONENT

5

LCC8,.2SQ,28

50 ohm

RF/Microwave Amplifiers

18 dB

18000 MHz

33000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.