| Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
250 W |
PLASTIC/EPOXY |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
320 A |
530 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.0063 ohm |
80 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-263AB |
215 pF |
AEC-Q101 |
||||||||||||||||||||||||
|
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
80 V |
C BEND |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
61 mJ |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.0059 ohm |
60 A |
DUAL |
R-PDSO-C5 |
1 |
DRAIN |
e3 |
30 |
260 |
|||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
96 W |
1 |
8.5 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN |
8.5 A |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
1.4 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
11.25 A |
17.2 mJ |
2.3 A |
24 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
1.39 W |
150 Cel |
SILICON |
85 ns |
65 ns |
.27 ohm |
2.25 A |
DUAL |
R-PDSO-G24 |
ISOLATED |
Not Qualified |
ESD PROTECTED |
MS-013AD |
NOT SPECIFIED |
NOT SPECIFIED |
75 pF |
||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
1.4 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
6 |
3 A |
18 mJ |
1 A |
20 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
1.389 W |
150 Cel |
SILICON |
110 ns |
82 ns |
.48 ohm |
1 A |
DUAL |
R-PDSO-G20 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
MS-013AC |
NOT SPECIFIED |
NOT SPECIFIED |
50 pF |
|||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
COMPLEX |
YES |
1.4 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
3 A |
180 mJ |
1 A |
20 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
1.389 W |
150 Cel |
SILICON |
110 ns |
132 ns |
.48 ohm |
1 A |
DUAL |
R-PDSO-G20 |
ISOLATED |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
MS-013AC |
NOT SPECIFIED |
NOT SPECIFIED |
125 pF |
||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE |
YES |
.87 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
3 |
7 A |
10.5 mJ |
1.4 A |
16 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
1.087 W |
150 Cel |
SILICON |
56 ns |
84 ns |
.35 ohm |
1.4 A |
DUAL |
R-PDSO-G16 |
ISOLATED |
Not Qualified |
MS-012AC |
NOT SPECIFIED |
NOT SPECIFIED |
40 pF |
|||||||||||||||||
|
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
75 W |
1 |
15 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
15 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
|
Renesas Electronics |
P-CHANNEL |
SINGLE |
YES |
2 W |
1 |
1 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
1 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
58 W |
1 |
55 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
55 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
2 W |
1 |
8 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN BISMUTH |
8 A |
e6 |
|||||||||||||||||||||||||||||||||||||
|
|
Renesas Electronics |
N-CHANNEL |
YES |
1.7 W |
3.8 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN BISMUTH |
3.8 A |
e6 |
|||||||||||||||||||||||||||||||||||||||
|
|
Renesas Electronics |
N-CHANNEL |
YES |
2 W |
6 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN BISMUTH |
6 A |
e6 |
|||||||||||||||||||||||||||||||||||||||
|
|
Renesas Electronics |
P-CHANNEL |
SINGLE |
YES |
2 W |
1 |
4.5 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
4.5 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
|
Renesas Electronics |
N-CHANNEL |
YES |
2 W |
8 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
8 A |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||
|
|
Renesas Electronics |
N-CHANNEL |
SEPARATE, 2 ELEMENTS |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
88 A |
12.1 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.0186 ohm |
11 A |
DUAL |
R-PDSO-G8 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
|
|
Renesas Electronics |
N-CHANNEL AND P-CHANNEL |
YES |
2 W |
5.5 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
5.5 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
1.5 W |
ENHANCEMENT MODE |
1 |
4 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN BISMUTH |
4 A |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
46.3 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
304 A |
84 mJ |
94 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.0048 ohm |
22.4 A |
DUAL |
S-PDSO-F5 |
1 |
DRAIN |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
|
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
95 W |
1 |
82 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
82 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
95 W |
1 |
82 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
82 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
84 W |
1 |
80 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
80 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
47 W |
1 |
40 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
40 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
84 W |
1 |
80 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
80 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
125 W |
1 |
83 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
83 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
56 W |
1 |
30 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
30 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
45 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
55 A |
25 mJ |
22 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.051 ohm |
22 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
TO-252 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
|
|
Renesas Electronics |
N-CHANNEL |
SINGLE |
YES |
288 W |
1 |
88 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
88 A |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
125 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
568 A |
505 mJ |
54 A |
5 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.00097 ohm |
54 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
212 pF |
||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
125 W |
1 |
334 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
334 A |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
83 W |
1 |
193 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
193 A |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
33.8 W |
1 |
66 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
66 A |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
33.8 W |
1 |
66 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
66 A |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
125 W |
1 |
334 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
334 A |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
125 W |
1 |
334 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
334 A |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
83 W |
1 |
193 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
193 A |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
83 W |
1 |
193 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
MATTE TIN |
193 A |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
Tokin |
SINGLE |
YES |
CERAMIC, METAL-SEALED COFIRED |
NO LEAD |
ROUND |
1 |
2 |
DISK BUTTON |
SILICON |
.3 ohm |
200 A |
END |
O-CEDB-N2 |
Not Qualified |
||||||||||||||||||||||||||||||||||||
|
International Rectifier |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
26 A |
100 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.48 ohm |
6.6 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
TO-252AA |
e0 |
||||||||||||||||||||||||
|
International Rectifier |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
58 A |
260 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.0135 ohm |
12 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
HIGH RELIABILITY |
MS-012AA |
e0 |
|||||||||||||||||||||||||
|
International Rectifier |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
200 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
390 A |
264 mJ |
110 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
115 ns |
-55 Cel |
115 ns |
Tin/Lead (Sn/Pb) |
.008 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
TO-263AB |
e0 |
30 |
225 |
211 pF |
|||||||||||||
|
International Rectifier |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
68 A |
71 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
38 W |
SILICON |
Tin/Lead (Sn/Pb) |
.075 ohm |
17 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-252AA |
e0 |
30 |
245 |
|||||||||||||||||||||
|
International Rectifier |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
110 A |
280 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.065 ohm |
31 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
HIGH RELIABILITY |
TO-252AA |
e0 |
30 |
245 |
|||||||||||||||||||||
|
International Rectifier |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
110 A |
280 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.065 ohm |
31 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
HIGH RELIABILITY |
TO-252AA |
e0 |
30 |
245 |
|||||||||||||||||||||
|
International Rectifier |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
38 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
44 A |
62 mJ |
11 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.28 ohm |
11 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
HIGH RELIABILITY |
TO-252AA |
e0 |
||||||||||||||||||||
|
International Rectifier |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
45 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
68 A |
71 mJ |
17 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
45 W |
175 Cel |
SILICON |
TIN LEAD |
.07 ohm |
17 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
TO-263AB |
e0 |
|||||||||||||||||||
|
International Rectifier |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
45 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
68 A |
71 mJ |
17 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
45 W |
175 Cel |
SILICON |
TIN LEAD |
.07 ohm |
17 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
TO-263AB |
e0 |
|||||||||||||||||||
|
International Rectifier |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
68 W |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
100 A |
130 mJ |
29 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
.04 ohm |
29 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
TO-263AB |
e0 |
30 |
225 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.