YES Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IPB80N06S207ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

250 W

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

530 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0063 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

215 pF

AEC-Q101

SIR826ADP-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

100 A

61 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0059 ohm

60 A

DUAL

R-PDSO-C5

1

DRAIN

e3

30

260

NDD60N550U1T4G

Onsemi

N-CHANNEL

SINGLE

YES

96 W

1

8.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

8.5 A

1

e3

30

260

TPIC5403DW

Texas Instruments

N-CHANNEL

COMPLEX

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

11.25 A

17.2 mJ

2.3 A

24

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1.39 W

150 Cel

SILICON

85 ns

65 ns

.27 ohm

2.25 A

DUAL

R-PDSO-G24

ISOLATED

Not Qualified

ESD PROTECTED

MS-013AD

NOT SPECIFIED

NOT SPECIFIED

75 pF

TPIC5621LDW

Texas Instruments

N-CHANNEL

COMPLEX

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

6

3 A

18 mJ

1 A

20

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1.389 W

150 Cel

SILICON

110 ns

82 ns

.48 ohm

1 A

DUAL

R-PDSO-G20

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-013AC

NOT SPECIFIED

NOT SPECIFIED

50 pF

TPIC5424LDW

Texas Instruments

N-CHANNEL

COMPLEX

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

4

3 A

180 mJ

1 A

20

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1.389 W

150 Cel

SILICON

110 ns

132 ns

.48 ohm

1 A

DUAL

R-PDSO-G20

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE

MS-013AC

NOT SPECIFIED

NOT SPECIFIED

125 pF

TPIC5302D

Texas Instruments

N-CHANNEL

SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE

YES

.87 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

3

7 A

10.5 mJ

1.4 A

16

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

1.087 W

150 Cel

SILICON

56 ns

84 ns

.35 ohm

1.4 A

DUAL

R-PDSO-G16

ISOLATED

Not Qualified

MS-012AC

NOT SPECIFIED

NOT SPECIFIED

40 pF

2SK1636STR-E

Renesas Electronics

N-CHANNEL

SINGLE

YES

75 W

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

15 A

NOT SPECIFIED

NOT SPECIFIED

2SJ199-T2-AZ

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

NOT SPECIFIED

NOT SPECIFIED

2SK3058-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

58 W

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

55 A

NOT SPECIFIED

NOT SPECIFIED

UPA1809GR-9JG-E1-A

Renesas Electronics

N-CHANNEL

SINGLE

YES

2 W

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

8 A

e6

UPA1857GR-9JG-E1-A

Renesas Electronics

N-CHANNEL

YES

1.7 W

3.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

3.8 A

e6

UPA1873GR-9JG-E1-A

Renesas Electronics

N-CHANNEL

YES

2 W

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

6 A

e6

UPA1930TE-T1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

2 W

1

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.5 A

NOT SPECIFIED

NOT SPECIFIED

UPA2752GR-E1-AT

Renesas Electronics

N-CHANNEL

YES

2 W

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

8 A

e3

260

UPA2754GR(0)-E1-AY

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

88 A

12.1 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0186 ohm

11 A

DUAL

R-PDSO-G8

NOT SPECIFIED

NOT SPECIFIED

UPA2794GR(0)-E1-AZ

Renesas Electronics

N-CHANNEL AND P-CHANNEL

YES

2 W

5.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.5 A

NOT SPECIFIED

NOT SPECIFIED

MCH6445-TL-W

Onsemi

N-CHANNEL

SINGLE

YES

1.5 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

4 A

1

e6

30

260

NTTFS4H05NTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

46.3 W

PLASTIC/EPOXY

SWITCHING

25 V

FLAT

SQUARE

ENHANCEMENT MODE

1

304 A

84 mJ

94 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0048 ohm

22.4 A

DUAL

S-PDSO-F5

1

DRAIN

e3

NOT SPECIFIED

NOT SPECIFIED

2SK3353(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

95 W

1

82 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

82 A

NOT SPECIFIED

NOT SPECIFIED

2SK3353-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

95 W

1

82 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

82 A

NOT SPECIFIED

NOT SPECIFIED

2SK3430-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

84 W

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

80 A

NOT SPECIFIED

NOT SPECIFIED

2SK3433(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

47 W

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40 A

NOT SPECIFIED

NOT SPECIFIED

2SK3435-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

84 W

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

80 A

NOT SPECIFIED

NOT SPECIFIED

2SK3479-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

125 W

1

83 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

83 A

NOT SPECIFIED

NOT SPECIFIED

2SK3481(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

56 W

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

30 A

NOT SPECIFIED

NOT SPECIFIED

NP22N055SLE-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

55 A

25 mJ

22 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.051 ohm

22 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP88N075KUE-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

1

88 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

88 A

NOT SPECIFIED

NOT SPECIFIED

NTMFS4H01NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

25 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

568 A

505 mJ

54 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.00097 ohm

54 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

212 pF

NTMFS4H01NT3G

Onsemi

N-CHANNEL

SINGLE

YES

125 W

1

334 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

334 A

1

e3

30

260

NTMFS4H02NFT3G

Onsemi

N-CHANNEL

SINGLE

YES

83 W

1

193 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

193 A

1

e3

30

260

NTTFS4H07NTAG

Onsemi

N-CHANNEL

SINGLE

YES

33.8 W

1

66 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

66 A

1

e3

30

260

NTTFS4H07NTWG

Onsemi

N-CHANNEL

SINGLE

YES

33.8 W

1

66 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

66 A

1

e3

30

260

NTMFS4H01NFT1G

Onsemi

N-CHANNEL

SINGLE

YES

125 W

1

334 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

334 A

1

e3

30

260

NTMFS4H01NFT3G

Onsemi

N-CHANNEL

SINGLE

YES

125 W

1

334 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

334 A

1

e3

30

260

NTMFS4H02NT1G

Onsemi

N-CHANNEL

SINGLE

YES

83 W

1

193 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

193 A

1

e3

30

260

NTMFS4H02NT3G

Onsemi

N-CHANNEL

SINGLE

YES

83 W

1

193 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

193 A

1

e3

30

260

TS300

Tokin

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

NO LEAD

ROUND

1

2

DISK BUTTON

SILICON

.3 ohm

200 A

END

O-CEDB-N2

Not Qualified

IRFR9120NTRR

International Rectifier

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

26 A

100 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.48 ohm

6.6 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

TO-252AA

e0

IRF7413ATR

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

58 A

260 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.0135 ohm

12 A

DUAL

R-PDSO-G8

Not Qualified

HIGH RELIABILITY

MS-012AA

e0

IRF3205STRR

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

200 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

390 A

264 mJ

110 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

115 ns

-55 Cel

115 ns

Tin/Lead (Sn/Pb)

.008 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

TO-263AB

e0

30

225

211 pF

IRFR024NTRR

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

71 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

38 W

SILICON

Tin/Lead (Sn/Pb)

.075 ohm

17 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED

TO-252AA

e0

30

245

IRFR5305TRL

International Rectifier

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 A

280 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.065 ohm

31 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

HIGH RELIABILITY

TO-252AA

e0

30

245

IRFR5305TRR

International Rectifier

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

110 A

280 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.065 ohm

31 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

HIGH RELIABILITY

TO-252AA

e0

30

245

IRFR9024NTRL

International Rectifier

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

38 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

62 mJ

11 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.28 ohm

11 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

HIGH RELIABILITY

TO-252AA

e0

IRFZ24NSTRL

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

71 mJ

17 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

45 W

175 Cel

SILICON

TIN LEAD

.07 ohm

17 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-263AB

e0

IRFZ24NSTRR

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

45 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

71 mJ

17 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

45 W

175 Cel

SILICON

TIN LEAD

.07 ohm

17 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-263AB

e0

IRFZ34NSTRR

International Rectifier

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

68 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

130 mJ

29 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin/Lead (Sn/Pb)

.04 ohm

29 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY

TO-263AB

e0

30

225

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.