YES Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IPB80N04S3H4ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

370 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0048 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

IPB80N06S205ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0048 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

ULTRA-LOW RESISTANCE

TO-263AB

e3

AEC-Q101

IPB80N06S208ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

450 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0077 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

IPB80N06S209ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

370 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0088 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

IPB80N06S2L05ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

800 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0057 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

IPB80N06S2L06ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

530 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0084 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

IPB80N06S405ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

152 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0057 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IPB80N06S407ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

71 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0071 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IPB80N06S4L05ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

152 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0048 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IPB80N06S4L07ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

71 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0064 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IPB80N08S207ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0071 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

IPB80N08S2L07ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.009 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

260

590 pF

AEC-Q101

IPB80P03P405ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

410 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.0047 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPB80P03P4L04ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

410 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.007 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

IPB80P03P4L07ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

135 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0069 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

IPB90N06S404ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

331 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0037 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

IPB90N06S4L04ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

331 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0034 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IPD100N06S403ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

300 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0035 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

ULTRA-LOW RESISTANCE

TO-252

NOT SPECIFIED

NOT SPECIFIED

IPD14N06S280ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

68 A

43 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.08 ohm

17 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

IPD15N06S2L64ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

76 A

43 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.085 ohm

19 A

SINGLE

R-PSSO-G2

DRAIN

ULTRA LOW RESISTANCE

TO-252

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPD25N06S240ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

116 A

80 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.04 ohm

29 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

IPD30N03S2L10ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

150 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0146 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

TO-252

e3

IPD30N06S223ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

150 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.023 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

IPD30N06S4L23ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

18 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.023 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

IPD50N06S214ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

240 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0144 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

ULTRA-LOW RESISTANCE

TO-252

AEC-Q101

IPD50N06S2L13ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

240 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0167 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

ULTRA-LOW RESISTANCE

TO-252

AEC-Q101

IPD50N06S409ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

87 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.009 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPD50N06S4L12ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

33 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.012 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPD50P03P4L11ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

100 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0105 ohm

50 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

AEC-Q101

IPD80P03P4L07ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

135 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0068 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

AEC-Q101

IPD90N06S404ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

331 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0038 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPD90N06S407ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

79 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

67 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0069 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

70 pF

AEC-Q101

IPD90N06S4L03ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

331 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0035 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

ULTRA LOW RESISTANCE

TO-252

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPD90N06S4L05ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

135 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0046 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

ULTRA LOW RESISTANCE

TO-252

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPD90N06S4L06ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

67 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0063 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

ULTRA-LOW RESISTANCE

TO-252

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPD90P03P4L04ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

370 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0068 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

AEC-Q101

IPP70N04S307AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

79 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

280 A

145 mJ

82 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.006 ohm

82 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

130 pF

AEC-Q101

IPB65R225C7ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

41 A

48 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.225 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

SPD30N03S2L07GBTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

250 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0098 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-252

SPD30N03S2L10GBTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

150 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0146 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-252

e3

SPD30N03S2L20GBTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

70 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.031 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-252

SPD50N03S207GBTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

250 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0073 ohm

50 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-252AA

e3

SPD50N03S2L06GBTMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

250 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0092 ohm

50 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-252AA

BSF035NE2LQXUMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

METAL

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

276 A

50 mJ

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

SILICON

SILVER NICKEL

.0046 ohm

22 A

BOTTOM

R-MBCC-N3

3

DRAIN

e4

IPL65R340CFDAUMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

104.2 W

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

32 A

290 mJ

10.9 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

.34 ohm

10.9 A

SINGLE

S-PSSO-N4

2A

DRAIN

e3

FQD9N25TM_F080

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

29.6 A

165 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.42 ohm

7.4 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AB

e3

30

260

BSO612CVGHUMA1

Infineon Technologies

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

12 A

47 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

NICKEL PALLADIUM GOLD SILVER

.12 ohm

3 A

DUAL

R-PDSO-G8

3

AVALANCHE RATED

e4

AEC-Q101

IPD30N03S2L07ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

250 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0098 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

ULTRA LOW RESISTANCE

TO-252

AEC-Q101

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.