YES Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IPB77N06S212ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

308 A

280 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0117 ohm

77 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

IPB80N03S4L02ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

260 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0024 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

ULTRA LOW RESISTANCE

TO-263AB

e3

IPB80N04S303ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

526 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0035 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

ULTRA LOW RESISTANCE

TO-263AB

e3

IPB80N04S304ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

290 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0042 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

ULTRA LOW RESISTANCE

TO-263AB

e3

IPB80N04S306ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

125 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0054 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

ULTRA LOW RESISTANCE

TO-263AB

e3

IPB80N04S403ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

200 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.003 ohm

80 A

SINGLE

R-PSSO-G2

1

TO-263AB

e3

IPB80N06S2H5ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

700 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0052 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

IPB80N06S2L07ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

450 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0097 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

IPB80N06S2L09ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

370 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.011 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

IPB80N06S2L11ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

280 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0147 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

TO-263AB

IPB80P04P405ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

64 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.0049 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPB80P04P407ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

31 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.0077 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

NOT SPECIFIED

NOT SPECIFIED

IPB80P04P4L04ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

60 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.0071 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

NOT SPECIFIED

NOT SPECIFIED

IPB80P04P4L06ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

31 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.0064 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

NOT SPECIFIED

NOT SPECIFIED

IPB90N04S402ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

475 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0021 ohm

90 A

SINGLE

R-PSSO-G2

1

TO-263AB

e3

IPD26N06S2L35ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

80 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.047 ohm

30 A

SINGLE

R-PSSO-G2

DRAIN

ULTRA LOW RESISTANCE

TO-252

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPD50N10S3L16ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

330 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0199 ohm

50 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

260

AEC-Q101

IPD50P04P413ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

18 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.0126 ohm

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPD70P04P409ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

292 A

24 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.0089 ohm

73 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPD80N04S306ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

125 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0052 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

AEC-Q101

IPD85P04P407ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

340 A

30 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.0073 ohm

85 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPD85P04P4L06ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

340 A

30 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.0064 ohm

85 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPD90P04P405ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

60 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.0047 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

NOT SPECIFIED

NOT SPECIFIED

IPD90P04P4L04ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

60 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.0043 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

TO-252

e3

NOT SPECIFIED

NOT SPECIFIED

IPG20N04S412ATMA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

80 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0122 ohm

20 A

DUAL

R-PDSO-F8

1

e3

IPG20N06S415ATMA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

90 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0155 ohm

20 A

DUAL

R-PDSO-F8

1

IPG20N06S4L14ATMA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

80 A

90 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0137 ohm

20 A

DUAL

R-PDSO-F8

1

LOGIC LEVEL COMPATIBLE

SPB80N06S08ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

700 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0077 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

e3

BTS7904BATMA1

Infineon Technologies

N-CHANNEL AND P-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

160 A

200 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0202 ohm

40 A

SINGLE

R-PSSO-G5

DRAIN

TO-263

IPB100N04S204ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0033 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-263AB

IPB100N04S2L03ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.003 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-263AB

IPB100N06S205ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0047 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

IPB100N08S207ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0068 ohm

100 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

IPB100N08S2L07ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0087 ohm

100 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

IPB120N06S402ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

560 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0024 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IPB120N06S403ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

392 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0028 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IPB120N06S4H1ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

1060 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0021 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IPB160N04S203ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

640 A

810 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0029 ohm

160 A

SINGLE

R-PSSO-G6

DRAIN

ULTRA-LOW RESISTANCE

TO-263

AEC-Q101

IPB160N04S2L03ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

640 A

810 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0037 ohm

160 A

SINGLE

R-PSSO-G6

DRAIN

ULTRA-LOW RESISTANCE

TO-263

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPB180N03S4LH0ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

980 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.00095 ohm

180 A

SINGLE

R-PSSO-G6

1

DRAIN

ULTRA-LOW RESISTANCE

TO-263

e3

AEC-Q101

IPB180N04S401ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

550 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0013 ohm

180 A

SINGLE

R-PSSO-G6

1

DRAIN

ULTRA-LOW RESISTANCE

TO-263

e3

AEC-Q101

IPB180N06S4H1ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

700 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0017 ohm

180 A

SINGLE

R-PSSO-G6

1

DRAIN

ULTRA-LOW RESISTANCE

TO-263

AEC-Q101

IPB45N06S4L08ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

97 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0079 ohm

45 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IPB45P03P4L11ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

110 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.0111 ohm

45 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

NOT SPECIFIED

NOT SPECIFIED

IPB50N10S3L16ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

330 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0206 ohm

50 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

245

AEC-Q101

IPB80N04S204ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0034 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-263AB

IPB80N04S2H4ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

660 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0037 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-263AB

IPB80N04S2L03ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0031 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

TO-263AB

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.