P-CHANNEL Power Field Effect Transistors (FET) 370

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
AO4413L	Alpha & Omega Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	3 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		15 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	3 W	150 Cel	SILICON		-55 Cel			.0085 ohm	15 A	DUAL	R-PDSO-G8									1067 pF
AON6411	Alpha & Omega Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	156 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	340 A	245 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0036 ohm	85 A	DUAL	R-PDSO-F8		DRAIN							1395 pF
FQD3P50TM_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8.4 A	250 mJ	2.1 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	4.9 ohm	2.1 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
NTD2955PT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	55 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	216 mJ	12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.18 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3
NTBV5605T4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	88 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	55 A	338 mJ	18.5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.14 ohm	18.5 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260
NTDV20P06LT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	65 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	304 mJ	15.5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	200 ns	-55 Cel	185 ns	MATTE TIN	.15 ohm	15.5 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260	120 pF	AEC-Q101
STD3PK50Z	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11.2 A		2.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	4 ohm	2.8 A	SINGLE	R-PSSO-G2	1				TO-252	e3	30	260
NVD5117PLT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	118 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	419 A	240 mJ	61 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.022 ohm	11 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	NOT SPECIFIED	NOT SPECIFIED
TT8J11TCR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	12 A		3.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.043 ohm	3.5 A	DUAL	R-PDSO-F8	1						10	260
TT8J13TCR	ROHM	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	1.25 W	PLASTIC/EPOXY	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	5 A		2.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.062 ohm	2.5 A	DUAL	R-PDSO-F8	1						10	260
RP1H065SPTR	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	45 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	26 A			6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.046 ohm	6.5 A	DUAL	R-PDSO-F6		DRAIN					NOT SPECIFIED	NOT SPECIFIED
SUD50P04-13L-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	80 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.013 ohm	50 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED
DMP2070UCB6-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	1.47 W	PLASTIC/EPOXY	SWITCHING	20 V	BALL	RECTANGULAR	ENHANCEMENT MODE	1	12 A		3.5 A	6	GRID ARRAY	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN SILVER COPPER	.15 ohm	2.5 A	BOTTOM	R-PBGA-B6	1					e1	30	260	38 pF
DMP2035UVT-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A		6 A	6	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.045 ohm	5.2 A	DUAL	R-PDSO-G6	1			HIGH RELIABILITY		e3		260		AEC-Q101
UPA2813T1L-E2-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES	52 W			30 V				1			27 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN	.0062 ohm	27 A								e3		260
STD25P03LT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	75 A	200 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.08 ohm	25 A	SINGLE	R-PSSO-G2	1	DRAIN				e3				AEC-Q101
STP10P6F6	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	30 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	80 mJ	10 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.116 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB		NOT SPECIFIED	NOT SPECIFIED
UPA2670T1R-E2-AX	Renesas Electronics	P-CHANNEL		YES	2.3 W										3 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					NICKEL PALLADIUM GOLD		3 A								e4
UPA2735GR-E1-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES	2.5 W							1			16 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel							16 A									NOT SPECIFIED	NOT SPECIFIED
UPA2736GR-E1-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES	2.5 W							1			14 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel							14 A									NOT SPECIFIED	NOT SPECIFIED
UPA2737GR-E1-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES	2.5 W							1			11 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel							11 A									NOT SPECIFIED	NOT SPECIFIED
UPA2738GR-E1-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES	2.5 W							1			10 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel							10 A									NOT SPECIFIED	NOT SPECIFIED
UPA2812T1L-E2-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES	52 W			30 V				1			30 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel						.0048 ohm	30 A									NOT SPECIFIED	NOT SPECIFIED
UPA2630T1R-E2-AX	Renesas Electronics	P-CHANNEL	SINGLE	YES	2.5 W							1			7 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					NICKEL PALLADIUM GOLD		7 A								e4		260
UPA2631T1R-E2-AX	Renesas Electronics	P-CHANNEL	SINGLE	YES	2.5 W							1			6 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					NICKEL PALLADIUM GOLD		6 A								e4		260
RSS050P03FU6TB	ROHM	P-CHANNEL	SINGLE	YES	2 W							1			5 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel							5 A			1						10	260
UPA2739T1A-E2-AY	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	83 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A	160 mJ	85 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0028 ohm	85 A	DUAL	R-PDSO-N8		DRAIN				e3
BSO207PHXUMA1	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	22.8 A	44 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.045 ohm	5 A	DUAL	R-PDSO-G8	3		Not Qualified			e3
BSZ120P03NS3EGATMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	73 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.02 ohm	11 A	DUAL	S-PDSO-N8		DRAIN	Not Qualified	ESD PROTECTED		e3
BSO200P03SHXUMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36.4 A	98 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.02 ohm	7.4 A	DUAL	R-PDSO-G8	3		Not Qualified	LOGIC LEVEL COMPATIBLE		e3
BSO203SPHXUMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35.6 A	97 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.021 ohm	5.7 A	DUAL	R-PDSO-G8	3		Not Qualified	LOGIC LEVEL COMPATIBLE		e3
SPP08P06PHXKSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	35.2 A	70 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.3 ohm	8.8 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3
BSO080P03NS3EGXUMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	149 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.008 ohm	9.8 A	DUAL	R-PDSO-G8	3		Not Qualified			e3
IPD068P03L3GBTMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	149 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0068 ohm	70 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
BSC130P03LSGAUMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	90 A	148 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.013 ohm	12 A	DUAL	R-PDSO-F8	3	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3
BSC200P03LSGAUMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	50 A	98 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.02 ohm	9.9 A	DUAL	R-PDSO-F8		DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED
IPD042P03L3GBTMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	269 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0068 ohm	70 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252	e3
BSO303PHXUMA1	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32.8 A	97 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.021 ohm	7 A	DUAL	R-PDSO-G8	3		Not Qualified	LOGIC LEVEL COMPATIBLE		e3
SPP18P06PHXKSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	81.1 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	74.8 A	151 mJ	18.7 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.13 ohm	18.7 A	SINGLE	R-PSFM-T3				AVALANCHE RATED	TO-220AB	e3
BSO613SPVGHUMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13.8 A	150 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.13 ohm	3.44 A	DUAL	R-PDSO-G8	3		Not Qualified	AVALANCHE RATED		e3
BSO080P03NS3GXUMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A	149 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.008 ohm	12 A	DUAL	R-PDSO-G8	3		Not Qualified			e3
BSO211PHXUMA1	Infineon Technologies	P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	18.4 A	28 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.067 ohm	3.2 A	DUAL	R-PDSO-G8	3		Not Qualified	LOGIC LEVEL COMPATIBLE		e3
BSO303SPHXUMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	97 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.021 ohm	7.2 A	DUAL	R-PDSO-G8	3		Not Qualified	LOGIC LEVEL COMPATIBLE		e3
SPP15P10PHXKSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO		PLASTIC/EPOXY		100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	230 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON				TIN	.24 ohm	15 A	SINGLE	R-PSFM-T3				AVALANCHE RATED	TO-220AB	e3
BSL207SPL6327HTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	44 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON					.041 ohm	6 A	DUAL	R-PDSO-G6				AVALANCHE RATED, LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
BSL211SPL6327HTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	18.8 A	26 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.067 ohm	4.7 A	DUAL	R-PDSO-G6			Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED
BSL307SPL6327HTSA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	44 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.043 ohm	5.5 A	DUAL	R-PDSO-G6			Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED			NOT SPECIFIED	NOT SPECIFIED
SPB08P06PGATMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES		PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35.2 A	70 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.3 ohm	8.8 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-263AB	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.