Power Field Effect Transistors (FET)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IPP80N03S4L03AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

260 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0027 ohm

80 A

SINGLE

R-PSFM-T3

1

ULTRA LOW RESISTANCE

TO-220AB

e3

IPP80N04S303AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

526 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0035 ohm

80 A

SINGLE

R-PSFM-T3

1

ULTRA LOW RESISTANCE

TO-220AB

e3

IPP80N04S306AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

125 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0057 ohm

80 A

SINGLE

R-PSFM-T3

1

ULTRA LOW RESISTANCE

TO-220AB

IPP80N04S403AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

200 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0037 ohm

80 A

SINGLE

R-PSFM-T3

1

TO-220AB

e3

IPP80N04S404AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

100 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0046 ohm

80 A

SINGLE

R-PSFM-T3

1

TO-220AB

e3

IPP80N06S2H5AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

700 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0055 ohm

80 A

SINGLE

R-PSFM-T3

TO-220AB

IPP80N06S2L09AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

370 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0113 ohm

80 A

SINGLE

R-PSFM-T3

LOGIC LEVEL COMPATIBLE

TO-220AB

IPP80N06S2L11AKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

280 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0147 ohm

80 A

SINGLE

R-PSFM-T3

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IPP80P04P405AKSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

64 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0052 ohm

80 A

SINGLE

R-PSFM-T3

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPP80P04P4L04AKSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

60 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0071 ohm

80 A

SINGLE

R-PSFM-T3

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IPP80P04P4L06AKSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

31 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0067 ohm

80 A

SINGLE

R-PSFM-T3

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

SPB80N06S08ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

700 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0077 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

e3

IPA60R600P6XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

18 A

133 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.6 ohm

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

BTS7904BATMA1

Infineon Technologies

N-CHANNEL AND P-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

160 A

200 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0202 ohm

40 A

SINGLE

R-PSSO-G5

DRAIN

TO-263

BTS7904SAKSA1

Infineon Technologies

N-CHANNEL AND P-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

160 A

200 mJ

5

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.0205 ohm

40 A

SINGLE

R-PSFM-T5

IPB100N04S204ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0033 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-263AB

IPB100N04S2L03ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.003 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-263AB

IPB100N06S205ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0047 ohm

100 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

IPB100N08S207ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0068 ohm

100 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

IPB100N08S2L07ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0087 ohm

100 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

IPB120N06S402ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

560 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0024 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IPB120N06S403ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

392 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0028 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IPB120N06S4H1ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 A

1060 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0021 ohm

120 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IPB160N04S203ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

640 A

810 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0029 ohm

160 A

SINGLE

R-PSSO-G6

DRAIN

ULTRA-LOW RESISTANCE

TO-263

AEC-Q101

IPB160N04S2L03ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

640 A

810 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0037 ohm

160 A

SINGLE

R-PSSO-G6

DRAIN

ULTRA-LOW RESISTANCE

TO-263

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPB180N03S4LH0ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

980 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.00095 ohm

180 A

SINGLE

R-PSSO-G6

1

DRAIN

ULTRA-LOW RESISTANCE

TO-263

e3

AEC-Q101

IPB180N04S401ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

550 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0013 ohm

180 A

SINGLE

R-PSSO-G6

1

DRAIN

ULTRA-LOW RESISTANCE

TO-263

e3

AEC-Q101

IPB180N06S4H1ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

720 A

700 mJ

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0017 ohm

180 A

SINGLE

R-PSSO-G6

1

DRAIN

ULTRA-LOW RESISTANCE

TO-263

AEC-Q101

IPB45N06S4L08ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

97 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0079 ohm

45 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IPB45P03P4L11ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

110 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.0111 ohm

45 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

NOT SPECIFIED

NOT SPECIFIED

IPB50N10S3L16ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

330 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0206 ohm

50 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

245

AEC-Q101

IPB80N04S204ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0034 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-263AB

IPB80N04S2H4ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

660 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0037 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

AVALANCHE RATED

TO-263AB

IPB80N04S2L03ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0031 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

TO-263AB

IPB80N04S3H4ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

370 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0048 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

IPB80N06S205ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0048 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

ULTRA-LOW RESISTANCE

TO-263AB

e3

AEC-Q101

IPB80N06S208ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

450 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0077 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

IPB80N06S209ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

370 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0088 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

TO-263AB

IPB80N06S2L05ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

800 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.0057 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

IPB80N06S2L06ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

530 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0084 ohm

80 A

SINGLE

R-PSSO-G2

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

IPB80N06S405ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

152 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0057 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IPB80N06S407ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

71 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0071 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IPB80N06S4L05ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

152 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0048 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IPB80N06S4L07ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

71 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0064 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

IPB80N08S207ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0071 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

IPB80N08S2L07ATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

300 W

PLASTIC/EPOXY

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

810 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.009 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

260

590 pF

AEC-Q101

IPB80P03P405ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

410 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.0047 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

IPB80P03P4L04ATMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

410 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.007 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.